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  ds30346 rev. 3 - 2 1 of 5 dda (xxxx) u www.diodes.com  diodes incorporated  epitaxial planar die construction  built-in biasing resistors  also available in lead free version characteristic symbol value unit supply voltage, (3) to (1) v cc 50 v input voltage, (2) to (1) dda124eu dda144eu dda114yu dda123ju dda114eu DDA143TU dda114tu v in +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 vmax +5 vmax v output current dda124eu dda144eu dda114yu dda123ju dda114eu DDA143TU dda114tu i o -30 -30 -70 -100 -50 -100 -100 ma output current all i c (max) -100 ma power dissipation (total) p d 200 mw thermal resistance, junction to ambient air (note 1) r  ja 625  c/w operating and storage and temperature range t j ,t stg -55 to +150  c features maximum ratings @ t a = 25  c unless otherwise specified a m j l d b c h k g f pxx ym pxx ym mechanical data  case: sot-363, molded plastic  case material - ul flammability rating 94v-0  moisture sensitivity: level 1 per j-std-020a  terminals: solderable per mil-std-202, method 208  also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 3  terminal connections: see diagram  marking: date code and marking code (see diagrams & page 3)  weight: 0.006 grams (approx.)  ordering information (see page 3) t c u d o r p w e n p/n r1 r2 marking dda124eu dda144eu dda114yu dda123ju dda114eu DDA143TU dda114tu 22k  47k  10k  2.2k  10k  4.7k  10k  22k  47k  47k  47k  10k  - - p17 p20 p14 p06 p13 p07 p12 r 1 r 1 r 2 r 2 r 1 r 1 r 1 , r 2 r 1 only schematic diagram dda (xxxx) u pnp pre-biased small signal sot-363 dual surface mount transistor sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j  0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25  0  8 all dimensions in mm note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. 150mw per element must not be exceeded.
ds30346 rev. 3 - 2 2 of 5 dda (xxxx) u www.diodes.com characteristic symbol min typ max unit test condition input voltage dda124eu dda144eu dda114yu dda123ju dda114eu v l(off) -0.5 -0.5 -0.3 -0.5 -0.5 -1.1 -1.1   -1.1  v v cc = -5v, i o = -100 a dda124eu dda144eu dda114yu dda123ju dda114eu v l(on)  -1.9 -1.9    1.9 -3.0 -3.0 -1.4 -1.1 -3.0 v o = -0.3, i o = -5ma v o = -0.3, i o = -2ma v o = -0.3, i o = -1ma v o = -0.3, i o = -5ma v o = -0.3, i o = -10ma output voltage dda124eu dda144eu dda114yu dda123ju dda114eu v o(on)  -0.1 -0.3 v i o /i l = -10ma / -0.5ma i o /i l = -10ma / -0.5ma i o /i l = -5ma / -0.25ma i o /i l = -5ma / -0.25ma i o /i l = -10ma / -0.5ma input current dda124eu dda144eu dda114yu dda123ju dda114eu i l  -0.36 -0.18 -0.88 -3.6 -0.88 ma v i = -5v output current i o(off)  -0.5 a v cc = -50v, v i = -0v dc current gain dda124eu dda144eu dda114yu dda123ju dda114eu g l 56 68 68 80 30  v o = -5v, i o = -5ma v o = -5v, i o = -5ma v o = -5v, i o = -10ma v o = -5v, i o = -10ma v o = -5v, i o = -5ma input resistor (r 1 ) tolerance
r 1 -30  +30 %  resistance ratio tolerance r 2 /r 1 -20  +20  gain-bandwidth product* f t  250  mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteristics @ t a = 25  c unless otherwise specified t c u d o r p w e n * transistor - for reference only characteristic (DDA143TU & dda114tu only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50  v i c = -50 a collector-emitter breakdown voltage bv ceo -50  v i c = -1ma emitter-base breakdown voltage bv ebo -5  v i e = -50 a collector cutoff current i cbo  -0.5 a v cb = -50v emitter cutoff current i ebo  -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat)  -0.3 v i c /i b = -2.5ma / -0.25ma DDA143TU i c /i b = -1ma / -0.1ma dda114tu dc current transfer ratio h fe 100 250 600  i c = -1ma, v ce = -5v input resistor (r 1 ) tolerance
r 1 -30  +30 %  gain-bandwidth product* f t  250  mhz v ce = -10v, i e = 5ma, f = 100mhz
ds30346 rev. 3 - 2 3 of 5 dda (xxxx) u www.diodes.com t c u d o r p w e n notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: dda114tu-7-f. device packaging shipping dda124eu-7 sot-363 3000/tape & reel dda144eu-7 sot-363 3000/tape & reel dda114yu-7 sot-363 3000/tape & reel dda123ju-7 sot-363 3000/tape & reel dda114eu-7 sot-363 3000/tape & reel DDA143TU-7 sot-363 3000/tape & reel dda114tu-7 sot-363 3000/tape & reel ordering information (note 3) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw date code key pxx = product type marking code see sheet 1 diagrams ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september pxx ym pxx ym marking information
ds30346 rev. 3 - 2 4 of 5 dda (xxxx) u www.diodes.com t c u d o r p w e n 0.1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.001 0.01 1 10 100 0 1 234 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e -25c 5 67 25c 0.1 v = 5v o 75c 0 2 4 6 12 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 4 output capacitance 10 5 15 25 8 10 i=0v e 10 1000 100 1 10 100 h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 75 c 25 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (mw) d typical curves - dda123ju one section
ds30346 rev. 3 - 2 5 of 5 dda (xxxx) u www.diodes.com t c u d o r p w e n 1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.01 0.1 1 10 100 01234 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e -25c 5 67 75c 25c 0.001 0 6 12 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 4 output capacitance 10 5 15 25 10 8 4 2 i=0v e 10 1000 100 1 1 10 100 h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 25 c 75 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (mw) d typical curves - dda114tu one section


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